Current Electricity
Electric current, drift velocity & mobility, Ohm's law (J = σE), resistivity & temperature dependence, EMF & internal resistance, cell combinations, Kirchhoff's rules & Wheatstone bridge.
Topic 3.2 – 3.4: Electric Current, Drift Velocity & Mobility Derivation
1 mm/s! Why? Because pushing one electron sends an electromagnetic domino ripple through the entire wire at near light speed!I = dqdt (Ampere, C/s) | Current Density J = IA (Vector!)vd = e E τm | Current link: I = n e A vdμ = |vd|E = e τm (Unit: m² V⁻¹ s⁻¹, always positive!)~1 mm/s) opposite to E, while thermal jitter is rabbit-fast (~10⁵ m/s)!E) makes the whole swarm slowly drift toward the positive end!- 1Scalar Current vs Vector Current Density: Even though current has direction along a wire,
Iis a SCALAR (wire currents add algebraically, NOT by vector parallelogram rule!). Current densityJ = I/A n̂IS a vector! - 2Drift Velocity Derivation: Electric field accelerates each electron with
a = −eE/m. Between collisions (average relaxation timeτ), random thermal velocities average to zero, leaving drift velocityvd = −(eEm)τ. - 3Relating
Iandvd: In timeΔt, electrons inside cylinder volumeA vd Δtcross the section:Δq = (n A vd Δt) e ⇒ I = n e A vd(andJ = n e vd).
n ≈ 8.5 × 10²⁸ m⁻³, area 1 mm², carrying 1.36 A. Then vd = I/(neA) ≈ 10⁻⁴ m/s = 0.1 mm/s — slower than an ant, yet the bulb lights instantly because the electric field wave travels at ~c!
3 A + 4 A = 7 A regardless of wire angle!), whereas current density J is a vector! (2) If a wire has varying cross-section (thick to narrow), steady current I stays constant, so drift speed vd ∝ 1/A is FASTER in the narrow section! (3) Mobility μ = |vd|/E is defined as POSITIVE for both electrons and holes.Topic 3.5 – 3.6: Ohm's Law (J = σE) & Ohmic vs Non-Ohmic Graphs
V = I R (Constant T!) | Microscopic form: J = σ ER = ρ lA (Unit: Ω) | ρ = mn e² τ = 1σI–V (Bulb), asymmetric (p-n Diode), negative slope (GaAs)!I–V vs V–I graphs! On V on y-axis vs I on x-axis, Slope = R; on I on y-axis vs V on x-axis, Slope = 1/R!- 1Microscopic Derivation (
J = σE): Substitutevd = eEτ/mintoJ = n e vd:J = (n e² τm) E = σ E! Thus conductivityσ = ne²τ/mand resistivityρ = m / (ne²τ)! - 2Macroscopic Link: Using
E = V/landJ = I/AinsideV/l = ρ (I/A)givesV = (ρ lA) I = R I! - 33 Ways Devices Break Ohm's Law (NCERT 3.6):
(a) Non-proportionality: Filament bulb heats up at highV, raisingRsoIbends downward.
(b) Sign depends on polarity: p-n junction diode lets huge current pass forward and tiny microamps in reverse.
(c) Multi-valuedVfor sameI: Gallium Arsenide (GaAs) shows a negative-resistance region where risingVdropsI!
T₁ and T₂ on a graph — ALWAYS read the axes first! If I is on the y-axis and V is on the x-axis, the STEEPER line has larger 1/R ⇒ LOWER resistance R (cooler temperature)! If V is on y-axis, steeper means HIGHER R!Topic 3.7 – 3.9: Resistivity, Temperature Dependence & Electric Power
α, and heating power I²R control where energy drops!n times length (constant volume) ⇒ Rnew = n² R! (ρ stays SAME!)ρT = ρ₀[1 + α(T − T₀)] • Metals: α > 0 • Semiconductors: α < 0 • Manganin: α ≈ 0P = VI = I²R = V²R | 1 kWh = 3.6 × 10⁶ Jα! And remember: stretching a wire 2× makes R 4×!τ ⇒ higher resistance!). Heat up silicon instead, and millions of fresh charge carriers pop free, so resistance DROPS!- 1Why
ρDepends Only on Material &T: Sinceρ = m / (n e² τ), cutting or stretching a wire NEVER changesρ! When stretched to lengthl' = n l, area shrinks toA' = A/n(same volume!), soR' = ρ(nl)/(A/n) = n² R! - 2Three
ρ vs TSignatures (Must-Draw Graphs!):
• Metals (Cu):ρrises nearly linearly at room temp (curves up gently from tiny residual value near0 K).
• Alloys (Nichrome, Manganin): Very large baselineρand almost flat line (α ≈ 0).
• Semiconductors (Si, Ge):ρdrops exponentially with risingT(α < 0)! - 3Why High-Voltage Power Lines Save Energy: Power delivered to town is
P = VI, while cable heat loss isPloss = I² Rc = P² Rc / V²! Stepping up voltage10×slashes cable heat loss100×!
60 W, 220 V bulb and a 100 W, 220 V bulb are wired in SERIES across 220 V. Which glows brighter? Since R = V²/P, the 60 W bulb has HIGHER resistance! In series both carry identical current I, so Pactual = I²R is bigger for the 60 W bulb — it glows brighter! (In parallel, 100 W wins!)
R by 4 (because area halves simultaneously!), NOT 2! (2) Does resistivity ρ change when you double wire radius or length? NO! ρ is a material property (changes ONLY with material or temperature!). (3) In semiconductors (Si, Ge), heating DECREASES resistivity (negative α)!Topic 3.10: Cells, EMF, Internal Resistance & Terminal PD
r, stealing part of the voltage whenever heavy current flows!I = 0); work per unit charge by non-electrostatic force (Unit: Volt!)I = εR + r | Terminal PD: V = ε − I r (V < ε!)V = ε + I r (V > ε) • V vs I slope = −r, intercept = εε as your salary, Ir as internal tax inside the cell, and V = ε − Ir as take-home pay delivered to load R! When charging, you pay extra: V = ε + Ir!Ir is paid, so voltmeter reads pure ε!- 1Deriving Terminal Potential Difference: External resistor
RgetsV = IR. Inside cell, chemical electrolyte opposes current with internal resistancer. Total loop drop:ε = IR + Ir = I(R + r)⇒I = εR + randV = ε − Ir! - 2Formula for Internal Resistance
r: RearrangingV = ε − (V/R)rgivesr = R (εV − 1). Larger electrode area cutsr; wider plate gap or colder electrolyte raisesr! - 3Maximum Power Transfer Theorem: Power delivered to external load
P = I²R = ε² R(R + r)²peaks when external load matches internal resistance:R = r(Pmax = ε² / (4r)).
ε = 12 V and r = 0.4 Ω. If starter draws I = 10 A, terminal voltage drops to V = 12 − (10)(0.4) = 8 V! What's the max possible short-circuit current? Imax = ε/r = 12/0.4 = 30 A!
V EVER be greater than EMF ε? YES — while CHARGING the battery from an external charger (current enters positive terminal, so V = ε + Ir > ε)! (2) On the V vs I graph of a cell, y-intercept (at I = 0) gives ε, while magnitude of negative slope gives internal resistance r!Topic 3.11: Series & Parallel Combination of Cells
εeq = ε₁ + ε₂ • Opposing: εeq = |ε₁ − ε₂| • ALWAYS req = r₁ + r₂!εeqreq = ε₁r₁ + ε₂r₂ | 1req = 1r₁ + 1r₂(nε, nr) (best if R ≫ r) • Parallel: (ε, r/n) (best if R ≪ r)ε₁ − ε₂), yet its internal resistance STILL ADDS (r₁ + r₂)! And in Parallel, think Conductance-weighted average: εeq = (ε₁r₂ + ε₂r₁)/(r₁ + r₂)!εeq = ε₁r₂ + ε₂r₁r₁ + r₂! The cell with SMALLER internal resistance dominates the output voltage — just like the quieter, stronger helper carrying more weight!- 1Series Derivation: Connect negative of cell 1 to positive of cell 2:
VAC = VAB + VBC = (ε₁ − Ir₁) + (ε₂ − Ir₂) = (ε₁ + ε₂) − I(r₁ + r₂). If cell 2 is reversed (+meets+),εeq = ε₁ − ε₂, yetreq = r₁ + r₂! - 2Parallel Derivation (2 Cells): Same terminal voltage
Vacross both branches:I₁ = (ε₁ − V)/r₁andI₂ = (ε₂ − V)/r₂. AddingI = I₁ + I₂gives:εeq = ε₁r₂ + ε₂r₁r₁ + r₂&req = r₁ r₂r₁ + r₂! - 3When to Pick Series vs Parallel? For
nidentical cells: Series givesI = nε/(R + nr)(wins whenR ≫ r); Parallel givesI = ε/(R + r/n) = nε/(nR + r)(wins whenR ≪ r)!
4 identical 1.5 V cells in series (total 6 V). You accidentally insert 1 cell backwards! How much EMF drops? Not just 1.5 V — the flipped cell stops adding +1.5 AND subtracts −1.5, leaving 3(1.5) − 1.5 = 3.0 V (lost 2 × 1.5 = 3 V!), while total internal resistance stays 4r!
n identical cells are in series and m cells are accidentally reversed, net EMF drops by 2mε to (n − 2m)ε (because each flipped cell costs 2ε!), while internal resistance stays nr! (2) If one cell in parallel has reversed polarity, replace +ε₂ with −ε₂ in the numerator: (ε₁r₂ − ε₂r₁)/(r₁ + r₂)!Topic 3.12 – 3.13: Kirchhoff's Rules & Wheatstone Bridge
ΣIin = ΣIout (ΣI = 0) → Based on Conservation of Charge!ΣΔV = 0 around any closed loop → Based on Conservation of Energy!Ig = 0, VB = VD) when R₁R₂ = R₃R₄!R₁R₄ = R₂R₃), erase the middle galvanometer wire!- 1Kirchhoff's First Rule (Junction / KCL): At any circuit junction, sum of currents entering equals sum of currents leaving (
ΣI = 0), because charge never piles up at a wire node. - 2Kirchhoff's Second Rule (Loop / KVL): Algebraic sum of potential changes around any closed loop is zero (
ΣΔV = 0). Walk rule: crossing resistor along assumed current ⇒−IR; crossing battery− → +⇒+ε! - 3Wheatstone Bridge Balance Proof: Four resistors form diamond
ABDAandBCDBwith galvanometer acrossBD. At null point (Ig = 0):
• Junction B & D:I₁ = I₃andI₂ = I₄.
• LoopsABDA&BCDBgiveI₁R₁ = I₂R₂andI₁R₃ = I₂R₄. Dividing both givesR₁ / R₂ = R₃ / R₄!
R₁ = 4 Ω, R₂ = 8 Ω, R₃ = 6 Ω, and R₄ = 12 Ω with a 50 Ω galvanometer in the middle. Check cross-products: 4 × 12 = 48 and 8 × 6 = 48 → BALANCED! Galvanometer current Ig = 0 (ignore the middle 50 Ω completely when finding Req!).
R₁/R₂ = R₃/R₄ valid! (3) Don't forget: Wheatstone bridge is most sensitive when all four resistances are of the same order of magnitude.Solved Previous Year Questions (Kerala DHSE & NCERT)
Q1 (Kerala HSE March • 3 Marks): Define drift velocity. Derive the relation I = n e A v_d and hence obtain the microscopic form of Ohm's law J = σ E.
E, vd = eEτ/m.In time
Δt, charge crossing area A is Δq = n (A vd Δt) e ⇒ I = n e A vd.Dividing by
A: J = n e vd = (ne²τ/m) E = σ E.Q2 (Kerala HSE Say • 2 Marks): State any two limitations of Ohm's law. Sketch the I–V characteristic of a p-n junction diode or GaAs.
V–I relation at high currents/temperatures (e.g. filament bulb).2. Depends on sign of
V (asymmetric in p-n diode) or gives non-unique V for same I (negative resistance region in GaAs).Q3 (Kerala HSE March • 2 Marks): Why are alloys like Manganin or Constantan used for making standard laboratory resistors?
2. They have a negligibly small temperature coefficient of resistivity (
α ≈ 0), so their resistance stays virtually constant despite room temperature swings.Q4 (Kerala HSE Model • 2 Marks): A wire of resistance 8 Ω is stretched to triple its original length at constant temperature. Calculate its new resistance.
A l = A' l' with l' = 3l ⇒ A' = A/3.R' = ρ l'/A' = ρ (3l)/(A/3) = 9 (ρl/A) = 9 × 8 = 72 Ω.Q5 (Kerala HSE March • 2 Marks): The V vs I graph for a cell shows y-intercept 6 V and hits the I-axis at 3 A. Find its EMF and internal resistance.
V = ε − Ir:• At
I = 0 (y-intercept): ε = 6 V.• At
V = 0 (short circuit I = 3 A): 0 = 6 − 3r ⇒ r = 2 Ω.Q6 (Kerala HSE Say • 3 Marks): Two cells of EMFs ε₁, ε₂ and internal resistances r₁, r₂ are connected in parallel. Derive expressions for equivalent EMF and internal resistance.
V: I₁ = (ε₁ − V)/r₁, I₂ = (ε₂ − V)/r₂.Total current
I = I₁ + I₂ = (ε₁/r₁ + ε₂/r₂) − V(1/r₁ + 1/r₂).Comparing with
I = εeq/req − V/req:req = r₁r₂/(r₁ + r₂) and εeq = (ε₁r₂ + ε₂r₁)/(r₁ + r₂).Q7 (Kerala HSE March • 3 Marks): State Kirchhoff's laws. Apply them to obtain the balance condition of a Wheatstone bridge.
ΣI = 0 at junction (charge conservation). KVL: ΣΔV = 0 in closed loop (energy conservation).In Wheatstone bridge with
Ig = 0: I₁ = I₃ and I₂ = I₄.Loop ABDA:
−I₁P + I₂R = 0 ⇒ I₁P = I₂R.Loop BCDB:
−I₁Q + I₂S = 0 ⇒ I₁Q = I₂S.Dividing gives
P / Q = R / S.Q8 (NCERT / DHSE Numerical • 2 Marks): Two bulbs rated 40 W, 220 V and 100 W, 220 V are connected in series across 220 V. Which bulb consumes more power and glows brighter?
R = V²/P ⇒ R₄₀ = 220²/40 = 1210 Ω, R₁₀₀ = 220²/100 = 484 Ω.In series both carry equal current
I, so Pactual = I² R ⇒ the 40 W bulb (higher resistance) dissipates more heat and glows brighter!